BSP373 Datasheet, PDF (6/9 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

BSP 373
Typ. output characteristics
I_D = ƒ(V_DS)
parameter: t_p = 80 µs
3.8
A
P_to^lik_tghjfed=
2W
c
3.2
I_D
2.8
2.4
2.0
1.6
1.2
0.8
V_GS [V]
a
4.0
b
4.5
c
5.0
b_d
5.5
e
6.0
f
6.5
g
7.0
h
7.5
i
8.0
j
9.0
k
10.0
a_l
20.0
0.4
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
V_DS
Typ. drain-source on-resistance
R_{DS (on)} = ƒ(I_D)
parameter: t_p = 80 µs, T_j = 25 °C
0.9
a
b
Ω
R_{DS (on) 0.7}
0.6
0.5
0.4
0.3
c
0.2
l
ikegjhdf
0.1
V_GS [V] =
ab
c
d
e
f
4.0 4.5 5.0 5.5 6.0 6.5
0.0
ghi j
7.0 7.5 8.0 9.0
kl
10.0 20.0
0.0 0.4 0.8 1.2 1.6 2.0 A 2.8
I_D
Typ. transfer characteristics I_D = f(V_GS)
parameter: t_p = 80 µs
Typ. forward transconductance g_fs = f (I_D)
parameter: t_p = 80 µs,
6.5
A
5.5
I_D
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 V 10
V_GS
Semiconductor Group
6
4.5
S
g_{fs 3.5}
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 1.0 2.0 3.0 4.0
A
6.0
I_D
Sep-12-1996