BFR193 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

BFR 193
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
1.3
pF
1.1
C_{cb 1.0}
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 22
V_R
16
Transition frequency f_T = f (I_C)
V_CE = Parameter
9
GHz
f_T
7
6
8V
5V
3V
5
2V
4
3
1V
0.7V
2
1
0
0 10 20 30 40 50 60 70 mA 85
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
10
G ^dB
12
10
8V
3V
2V
dB
G
8
7
6
5
8V
3V
2V
8
1V
6
0.7V
0 10 20 30 40 50 60 70 mA 85
I_C
4
1V
3
2
0.7V
0 10 20 30 40 50 60 70 mA 85
I_C
Semiconductor Group
6
Dec-11-1996