BFR182W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

BFR 182W
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.8
pF
C_cb
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 22
V_R
20
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
f_T
8
7
6
5
4
3
2
1
0
0
5
10
15
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
14
10V
8V
5V
3V
2V
1V
0.7V
mA
25
I_C
dB
G
16
14
12
10V
dB
G
3V
10
2V
8
6
1V
4
10V
3V
2V
1V
0.7V
10
0.7V
2
8
0
4
8 12 16 20 mA 26
I_C
0
2
6
10
14
18 mA 26
I_C
Semiconductor Group
6
Dec-11-1996