BFR181 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

BFR 181
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.45
pF
C_{cb 0.35}
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 22
V_R
20
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
10V
f_T
8
8V
7
5V
6
3V
5
4
2V
3
1V
2
0.7V
1
0
0 2 4 6 8 10 12 14 mA 17
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
14
dB
G
10V
5V
16
3V
2V
14
12
1V
10
8
0.7V
0 2 4 6 8 10 12 14 mA 18
I_C
dB
10V
G
3V
10
2V
8
6
1V
4
0.7V
2
0
0 2 4 6 8 10 12 14 mA 18
I_C
Semiconductor Group
6
Dec-11-1996