BFP280 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

BFP 280
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.5
C_cb ^pF
0.3
0.2
0.1
0.0
0
2
4
6
8
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V
12
V_R
22
dB
G
18
10V
2V
16
1V
14
0.7V
12
10
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
f_T
8
7
6
10V
8V
5V
3V
2V
5
4
1V
0.7V
3
2
1
0
2
4
6
8
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
mA 11
I_C
18
dB
G
14
12
10V
3V
2V
10
1V
8
0.7V
6
8
0
2
4
6
8 mA 11
I_C
4
0
2
4
6
8 mA 11
I_C
Semiconductor Group
6
Dec-11-1996