BFP196W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

BFP 196W
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
1.7
pF
1.4
C_cb
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
4
8
12
16 V 22
V_R
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
Transition frequency f_T = f (I_C)
V_CE = Parameter
7.5
GHz
6.5
f_T 6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
10V
5V
3V
2V
1V
0.7V
20
40
60
80 mA 120
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
20
dB
18
G
17
16
15
14
13
12
11
10
9
8
0
8V
3V
2V
1V
0.7V
20
40
60
80
mA 120
I_C
12
dB
G
10
9
8V
3V
2V
8
7
1V
6
5
0.7V
4
0
20
40
60
80 mA 120
I_C
Semiconductor Group
6
Dec-12-1996