BFP193W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

BFP 193W
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
1.6
pF
C_cb
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V
24
V_R
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
f_T
8
7
6
5
4
8V
5V
3V
2V
3
1V
0.7V
2
1
0
0 10 20 30 40 50 60 70 80 mA 95
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
22
dB
G
18
16
14
10V
5V
3V
2V
12
1V
10
8
0.7V
6
0 10 20 30 40 50 60 70 80 mA 95
I_C
15
dB
13
10V
G 12
11
3V
10
2V
9
8
7
6
1V
5
4
3
0.7V
2
1
0
0 10 20 30 40 50 60 70 mA 85
I_C
Semiconductor Group
6
Dec-12-1996