BFP182R Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

BFP 182R
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.50
pF
C_cb ^0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 22
V_R
23
dB
21
G
20
19
18
17
16
15
14
13
12
11
10
0
10V
8V
5V
3V
2V
1V
0.7V
5
10
15
mA
25
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
f_T
8
7
6
5
4
3
2
1
0
0
5
10
15
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
16
dB
14
G
13
12
11
10
9
8
7
6
5
4
0
5
10
15
10V
5V
3V
2V
1V
0.7V
mA
25
I_C
10V
3V
2V
1V
0.7V
mA
25
I_C
Semiconductor Group
6
Jan-21-1997