TLE5226G Datasheet, PDF (5/13 Pages) Siemens Semiconductor Group – Smart Quad Channel Low-Side Switch

TLE 5226 G
Electrical Characteristics
Parameter and Conditions
V_S = 4.8 to 18 V ; T_j = - 40 °C to + 150 °C
(unless otherwise specified)
Symbol
1. Power Supply (V_S)
Supply current (Outputs ON)
Supply current (Outputs OFF)
V_ENA = L, V_STBY = H
Operating voltage
Standby current
I_S
I_S
V_S
V_STBY = L
I_S
2. Power Outputs
ON state resistance Channel 1,2
I_D = 1A; V_S ≥ 9.5 V
T_j = 25 ° C
T_j = 125°C ¹
ON state resistance Channel 3,4
I_D = 1A; V_S ≥ 9.5 V
T_j = 25 ° C
T_j = 125°C ¹
Z-Diode clamping voltage (OUT1...4) I_D ≥ 100 mA
Pull down resistor
V_STBY = H, V_IN = L
T_j = 25 °C
T _j = -40 °C ...150°C
Output leakage current
Output on delay time ²
Output off delay time ²
Output on fall time ²
Output off rise time ²
Output off status delay time ²
Output on status delay time ³
V_STBY = L
I_D = 1 A
I_D = 1 A
I_D = 1 A
I_D = 1 A
I_D = 1 A
Overload switch-off delay time
R_DS(ON)
R_DS(ON)
V_DS(AZ)
R_PD
I_Dlk
t_on
t_off
t_fall
t_rise
t₄
t₅
t_DSO
3. Digital Inputs (IN1, IN2, IN3, IN4, ENA)
Input low voltage
Input high voltage
Input voltage hysteresis ³
Input pull down current
Enable pull down current
V_IN = 5 V; V_S ≥ 6.5 V
V_ENA = 5 V; V_S ≥ 6.5 V
V_INL
V_INH
V_INHys
I_IN
I_ENA
4. Digital Status Outputs (ST1 - ST4) open Drain
Output voltage low
I_ST = 2 mA V_STL
Leakage current high
I_STH
Values
min typ
Unit
max
8 mA
4 mA
4.8
32 V
10 µA
0.2
Ω
0.5
0.35
Ω
0.75
45
60 V
14
20
26 kΩ
10
40
20 µA
65 µs
10
80
5
40
5
40
10
60
50
50 100 300
- 0.3
2.0
50 100
10 30
10 20
1.0 V
6.0 V
mV
60 µA
40 µA
0.5 V
10 µA
1 _{Measured on P-DSO-20 devices}
2 _{See timing diagram, resitive load condition; VS ≥ 9 V}
3 _{This parameter will not be tested but assured by design}
Semiconductor Group
Page ₅
1998-02-04