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| SFH3401 Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – NPN-Silizium-Fototransistor Silicon NPN Phototransistor | |||
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SFH 3401
TA = 25 oC, λ = 950 nm
Rel.spectral sensitivity Srel = f (λ)
100
OHF02332
S rel %
80
70
60
50
40
30
20
10
0400 500 600 700 800 900 nm 1100
λ
Photocurrent IPCE = f (TA),
VCE = 5 V, normalized to 25 °C
Î PCE 1.6
Î PCE25
1.4
OHF01524
1.2
1.0
0.8
0.6
0.4
0.2
0
-25 0 25 50 75 C 100
TA
Photocurrent IPCE = f (VCE)
SFH 3401-3
3.0
mA
Î pce
2.5
OHF00327
1.0 mW/cm 2
2.0
1.5
0.5 mW/cm 2
1.0
0.25 mW/cm 2
0.5
0.1 mW/cm 2
0
0 10 20 30 40 50 60 V 70
Vce
Photocurrent IPCE = f (Ee), VCE = 5 V
10 1
mA
Î pce
10 0
10 -1
OHF00326
1
2
3
10 -2
10 -3
10 -4
10 -3
10 -2
mW/cm 2 10 0
Ee
Dark current
ICEO = f (TA), VCE = 10 V, E = 0
10 2
nA
Î CEO
OHF02342
10 1
10 0
10 -1
10 -2
0
20 40 60 80 ËC 100
TA
Dark current ICEO = f (VCE), E = 0
10 2
nA
Î CEO
OHF02341
10 1
10 0
10 -1
10 -2
0
10 20 30 40 50 V 70
V CE
Collector-emitter capacitance
CCE = f (VCE), f = 1 MHz, E = 0
50
OHF02344
C CE pF
40
30
20
10
0
10 -2
10 -1
10 0
10 1 V 10 2
VCE
Collector-base capacitance
CCB= f (VCB), f = 1 MHz, E = 0
50
pF
C CB 45
OHF00332
40
35
30
25
20
15
10
5
0
10 -2
10 -1
10 0
10 1 V 10 2
V CB
Emitter-base capacitance
CEB = f (VEB), f = 1 MHz, E = 0
20
pF
C EB 18
OHF00333
16
14
12
10
8
6
4
2
0
10
-2
10 -1
10 0
10 1 V 10 2
V EB
Semiconductor Group
5
1998-04-27
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