BTS129 Datasheet, PDF (5/8 Pages) Siemens Semiconductor Group – TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)

BTS 129
Typical output characteristics I_D = f (V_DS)
Parameter: t_p = 80 µs
60 ^{BTS 129}
Ι _D ^{A Ptot = 75W VGS = 20V 10V} 9V
50
SIT00562
8V
7.5V
40
7V
6.5V
30
6V
20
5.5V
5V
10
4.5V
4V
0
0
1
2
3
4 V5
V_DS
Typ. drain-source on-state resistance
R_DS(on) = f (I_D)
Parameter: V_GS
Safe operating area I_D = f (V_DS)
Parameter: D = 0.01, T_C = 25 °C
Drain-source on-state resistance
R_DS(on) = f (T_j)
Parameter: I_D = 17 A, V_GS = 10 V (spread)
Semiconductor Group
5