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| BSM181F Datasheet, PDF (5/7 Pages) Siemens Semiconductor Group – SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode) | |||
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Continuous drain current
ID = f (TC)
parameter: VGS ⥠10 V, T j = 150 ËC
BSM 181 F
Drain-source breakdown voltage
V(BR)DSS (Tj) = b à V(BR)DSS (25 ËC)
Drain source on-state resistance
R = DS(on) f (Tj)
parameter: ID = 34 A; VGS = 10 V, (spread)
Gate threshold voltage VGS(th) = f (Tj)
parameter: VDS = VGS, I D = 1 mA
Semiconductor Group
68
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