BFR193W Datasheet, PDF (4/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

BFR 193W
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
0.2738 fA
BF =
125
-
VAF = 24
V
IKF =
0.26949 A
NE =
1.935
-
BR = 14.267 -
VAR = 3.8742 V
IKR = 0.037925 A
NC = 0.94371 -
RB =
1
Ω
RBM = 1.8368 Ω
RE =
0.76534 Ω
CJE = 1.1824 fF
VJE = 0.70276 V
TF =
18.828 ps
XTF = 0.69477 -
ITF =
0.96893 mA PTF = 0
deg
VJC = 1.1828 V
MJC = 0.30002 -
TR =
1.0037 ns
CJS = 0
fF
MJS = 0
-
XTB = 0
-
XTI = 3
-
FC =
0.72063 -
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
0.95341 -
10.627 fA
1.4289 -
0.037409 fA
0.91763 mA
0.11938 Ω
0.48654 -
0.8
V
935.03 fF
0.053563 -
0.75
V
1.1
eV
300
K
Package Equivalent Circuit:
LBI =
0.57
nH
LBO = 0.4
nH
LEI =
0.43
nH
LEO = 0.5
nH
LCI =
0
nH
LCO = 0.41
nH
CBE = 61
fF
CCB = 101
fF
CCE = 175
fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-11-1996