BCV29 Datasheet, PDF (4/4 Pages) NXP Semiconductors – NPN Darlington transistors

Collector-emitter saturation voltage
IC = f (VCEsat)
hFE = 1000
BCV 29
BCV 49
Base-emitter saturation voltage
IC = f (VBEsat)
hFE = 1000
Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance CEB0 = f (VEB0)
DC current gain hFE = f (IC)
VCE = 5 V
Semiconductor Group
4