BAT15-098 Datasheet, PDF (4/4 Pages) Siemens Semiconductor Group – Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type)

BAT 15-098
S11-Parameters
Typical impedance characteristics (with external bias I and Z0 = Ω)
f
I = 0.02 mA
GHz MAG ANG
I = 0.05 mA
MAG ANG
I = 0.1 mA
MAG ANG
I = 0.2 mA
MAG ANG
I = 0.5 mA
MAG ANG
1 0.96 – 22.19 0.83 – 24.20 0.71 – 24.59 0.71 – 24.59 0.06 – 36.11
2 0.95 – 44.30 0.82 – 46.30 0.68 – 46.70 0.68 – 46.70 0.04 – 53.72
3 0.94 – 68.60 0.80 – 71.30 0.65 – 72.30 0.65 – 72.30 0.03 – 94.30
4 0.91 – 96.40 0.76 – 100.00 0.61 – 101.50 0.61 – 101.50 0.09 122.49
5 0.88 – 127.50 0.74 – 133.50 0.57 – 138.50 0.57 – 138.50 0.18 101.50
6 0.87 – 165.30 0.72 – 174.30 0.55 – 151.30 0.55 – 151.30 0.29
81.30
7 0.86 – 150.50 0.72 141.50 0.60 133.70 0.60 133.70 0.41
65.70
8 0.89 109.60 0.78 101.70 0.68
94.70 0.68
94.70 0.52
49.50
9 0.91
75.20 0.84
68.89 0.77
63.90 0.77
63.90 0.61
33.50
10 0.93
45.10 0.88
41.10 0.83
38.40 0.83
38.40 0.71
19.49
S11 = f (f, I)
Semiconductor Group
4