BAT14-099 Datasheet, PDF (4/4 Pages) Siemens Semiconductor Group – Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)

BAT 14-099
S11-Parameters
Typical impedance characteristics (with external bias I and Z0 = Ω)
f
GHz
1
2
3
4
5
6
7
8
9
10
11
12
I = 0.02 mA I = 0.05 mA I = 0.1 mA
I = 0.2 mA
I = 0.5 mA
MAG ANG MAG ANG MAG ANG MAG ANG MAG ANG
0.99 – 15.89 0.91 – 16.40 0.79 – 16.40 0.57 – 16.60 0.13 – 17.30
0.96 – 30.40 0.88 – 30.80 0.76 – 31.09 0.56 – 30.70 0.13 – 28.40
0.95 – 45.30 0.87 – 46.20 0.75 – 47.30 0.55 – 47.00 0.11 – 43.99
0.93 – 59.60 0.86 – 61.60 0.73 – 62.40 0.53 – 62.40 0.10 – 54.40
0.93 – 74.80 0.85 – 77.10 0.72 – 78.70 0.51 – 78.70 0.07 – 80.70
0.91 – 89.50 0.83 – 93.10 0.69 – 95.70 0.48 – 95.70 0.04 – 102.30
0.89 – 106.60 0.80 – 110.50 0.66 – 112.70 0.45 – 114.00 0.02 158.01
0.88 – 123.40 0.79 – 129.40 0.64 – 132.40 0.43 – 135.40 0.06 118.40
0.86 – 143.20 0.76 – 150.20 0.62 – 154.20 0.40 – 161.20 0.12
96.20
0.83 – 166.10 0.72 – 174.10 0.58 – 179.10 0.37 171.10 0.19
72.10
0.82 168.10 0.71 158.10 0.59 153.80 0.39 140.80 0.25
62.60
0.80 138.20 0.72 127.20 0.60 121.20 0.44 108.20 0.33
49.20
S11 = f (f, I)
Semiconductor Group
4