SDA2516-5 Datasheet, PDF (3/12 Pages) Siemens Semiconductor Group – Nonvolatile Memory 1-Kbit E2PROM

SDA 2516-5
Memory Reprogramming
The reprogramming cycle of a memory word comprises an erase and a subsequent write process.
During erase, all eight bits of the selected word are set into "1" state. During write, "0" states are
generated according to the information in the internal data register, i.e. according to the third input
control word.
After the 27th and the last clock of the control word input, the active programming process is started
by the stop condition. The active reprogramming process is executed under onchip control.
The time required for reprogramming depends on component deviation and data patterns.
Therefore, with rated supply voltage, the erase/write process extends over max. 20 ms, or more
typically, 10 ms. In the case of data word input without write request (write request is defined as data
bit in data register set to “0”), the write process is suppressed and the programming time is
shortened. During a subsequent programming of an already erased memory address, the erase
process is suppressed again, so that the reprogramming time is also shortened.
Important: Switch-On Mode and Chip Reset
After the supply voltage V_DD has been connected, the data output will be in the high-impedance
mode. As a rule, the first operating mode to be entered, should be the read process of a word
address. As a result of the built-in “power-on reset” circuit, programming requests will not be
accepted immediately after the supply voltage has been switched on.
Total Erase
Enter the control word CS/E, load the address register with address 0 and the data register with FF
(hex) to erase the entire contents of the memory. Switch input CS2 to “open” immediately prior to
generating the stop condition. The subsequent stop condition triggers a total erase. Upon
termination of “total erase”, CS2 must be reconnected to either 0 V or ≥ 4.5 V.
Semiconductor Group
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