FP425L90 Datasheet, PDF (3/4 Pages) Siemens Semiconductor Group – Differential Magneto Resistor

FP 425 L 90
Maximum ratings
Parameter
Operating temperature
Storage temperature
Power dissipation¹⁾
Symbol
T_A
T_stg
P_tot
Supply voltage (B = 0.2 T, T_A = 25 °C)
Thermal conductivity
–attached to heatsink
–in still air
V_IN
G_thcase
G_thA
Characteristics (T_A = 25 °C)
Nominal supply voltage (B = 0.2 T)²⁾ V_INN
Basic resistance
(I < 1 mA, B = 0 T)
R_01-3
Center symmetry³⁾
M
Relative resistance change
(R₀ = R_01-3, R_04-6 at B = 0 T)
B = ± 0.3 T⁴⁾
B=±1T
Temperature coefficient
B=0T
B = ± 0.3 T
B=±1T
R_B/R₀
TC_R
Value
Unit
– 40 / + 175 °C
– 40 / + 185 °C
800
mW
8
V
20
mW/K
2
mW/K
5
V
160 – 280 Ω
≤3
%
–
> 1.7
>7
– 0.16
%/K
– 0.38
%/K
– 0.54
%/K
1)
2)
T = T_case
T = T_case,
T < 80 °C
3)
M
=
R_{----0--1---–---2---–-----}R_{---0--2---–----3}
R_{01 – 2}
×
100%
for
R_01-2
>
R_02-3
M
=
R_{----0--4---–---5---–-----}R_{---0--5---–----6}
R_{04 – 5}
×
100%
for
R_04-5
>
R_05-6
4) 1 T = 1 Tesla = 10⁴ Gauss
Semiconductor Group
3