FP410L Datasheet, PDF (3/4 Pages) Siemens Semiconductor Group – Double Differential Magneto Resistor

Maximum ratings
Parameter
Operating temperature
Storage temperature
Power dissipation¹⁾
Supply voltage²⁾ (B = 0.3 T)
Thermal conductivity
–attached to heatsink
–in still air
Characteristics (T_A = 25 °C)
Basic resistance
(I ≤ 1 mA; B = 0 T)
Center symmetry³⁾
Relative resistance change
(R = R_01-3, R_04-6 at B = 0 T)
B = ± 0.3 T⁴⁾
B=±1T
Temperature coefficient
B=0T
B = ± 0.3 T
B=±1T
FP 410 L (4 x 80) FM
Symbol
T_A
T_stg
P_tot
V_IN
G_{th case}
G_{th A}
Value
– 40 / + 175
– 40 / + 185
1000
8
≥ 20
2
Unit
°C
°C
mW
V
mW/K
R_01-3
R_04-6
M
R_B/R₀
TC_R
110…220
Ω
≤6
%
> 1.7
–
>7
– 0.16
%/K
– 0.38
%/K
– 0.54
%/K
1) Corresponding to diagram P_tot = f(T_case)
2) Corresponding to diagram V_IN = f(T_case)
3)
M
=
R_{----0--1---–---2---–-----}R_{---0--2---–----3}
R_{01 – 2}
×
100%
for
R_01-2
>
R_02-3
M
=
R_{----0--4---–---5---–-----}R_{---0--5---–----6}
R_{04 – 5}
×
100%
for
R_04-5
>
R_05-6
4) 1 T = 1 Tesla = 10⁴ Gauss
Semiconductor Group
3