BXY43 Datasheet, PDF (3/8 Pages) Siemens Semiconductor Group – HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)

BXY 43
Electrical Characteristics
Table 2
DC Characteristics at T_A = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min. typ. max.
Reverse current 1
V_R1 = 150 V
Reverse current 2
V_R2 = 100 V
Forward voltage
I_F = 100 mA
I_R1
-
-
100
nA
I_R2
-
-
10
nA
V_F
-
0.97 1
V
Table 3
AC Characteristics at T_A = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min. typ. max.
Total capacitance
V_R = 50 V, f = 1 MHz
BXY 43-T, -T1
BXY 43-P1
BXY 43-FP
C_T
pF
-
0.30 0.45
0.3
0.50 0.75
0.4
0.60 0.85
Forward resistance
R_F1
f = 100 MHz, I_F1 = 20 mA
Forward resistance
R_F2
f = 100 MHz, I_F2 = 1 mA
Forward resistance
R_F3
f = 100 MHz, I_F3 = 10 mA
Minority carrier lifetime
t_L
I_F = 10 mA, I_R = 6 mA, I_R = 3 mA
-
55
70
W
-
2.2
3.0
W
-
0.9
1.5
W
250
650
-
ns
Semiconductor Group
3
Draft A03 1998-04-01