BUZ10L Datasheet, PDF (3/9 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

BUZ 10 L
Not for new design
Electrical Characteristics, at T_j = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Dynamic Characteristics
Transconductance
V_DS≥ 2 _* I_{D *} R_DS(on)max, I_D = 11.5 A
Input capacitance
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Output capacitance
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Reverse transfer capacitance
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Turn-on delay time
V_DD = 30 V, V_GS = 5 V, I_D = 3 A
R_GS = 50 Ω
Rise time
V_DD = 30 V, V_GS = 5 V, I_D = 3 A
R_GS = 50 Ω
Turn-off delay time
V_DD = 30 V, V_GS = 5 V, I_D = 3 A
R_GS = 50 Ω
Fall time
V_DD = 30 V, V_GS = 5 V, I_D = 3 A
R_GS = 50 Ω
g_fs
8
C_iss
-
C_oss
-
C_rss
-
t_d(on)
-
t_r
-
t_d(off)
-
t_f
-
14.5 -
800
1100
300
450
110
170
25
40
75
120
110
160
75
95
Unit
S
pF
ns
Semiconductor Group
3
07/96