BTS726L1 Datasheet, PDF (3/15 Pages) Siemens Semiconductor Group – Smart Two Channel Highside Power Switch (Overload protection Current limitation Short-circuit protection Thermal shutdown)

Maximum Ratings at T_j = 25°C unless otherwise specified
Parameter
Symbol
Load current (Short-circuit current, see page 5)
Load dump protection²⁾ V_LoadDump = U_A + V_s, U_A = 13.5 V
R_I³⁾ = 2 Ω, t_d = 200 ms; IN = low or high,
each channel loaded with R_L = 3.4 Ω,
Operating temperature range
Storage temperature range
Power dissipation (DC)⁵
T_a = 25°C:
(all channels active)
T_a = 85°C:
Inductive load switch-off energy dissipation, single pulse
V_bb = 12V, T_j,start = 150°C⁵⁾,
I_L = 4.0 A, Z_L = 50 mH, 0 Ω
one channel:
I_L = 6.0 A, Z_L = 42 mH, 0 Ω
two parallel channels:
see diagrams on page 9 and page 10
Electrostatic discharge capability (ESD)
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagram page 8
I_L
V_{Load dump4}⁾
T_j
T_stg
P_tot
E_AS
V_ESD
V_IN
I_IN
I_ST
Thermal resistance
junction - soldering point^5),6)
junction - ambient⁵⁾
each channel: R_thjs
one channel active: R_thja
all channels active:
BTS 726 L1
Values Unit
self-limited A
60 V
-40 ...+150 °C
-55 ...+150
3.7 W
1.9
0.5
J
1.0
1.0 kV
-10 ... +16 V
±2.0 mA
±5.0
12 K/W
41
34
2) _{Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a}
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input
protection is integrated.
3) _{RI = internal resistance of the load dump test pulse generator}
4) _{VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839}
5) _{Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm}² _{(one layer, 70µm thick) copper area for Vbb}
connection. PCB is vertical without blown air. See page 15
6) _{Soldering point: upper side of solder edge of device pin 15. See page 15}
Semiconductor Group
3