BTS410E2 Datasheet, PDF (3/14 Pages) Siemens Semiconductor Group – Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)

Electrical Characteristics
Parameter and Conditions
at Tj = 25 °C, V_bb = 12 V unless otherwise specified
BTS 410 E2
Symbol
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I_L = 1.6 A
T_j=25 °C: ^RON
T_j=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
V_ON = 0.5 V, T_C = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=30 V, V_IN= 0, see diagram
page 7, T_j =-40...+150°C
Turn-on time
IN to 90% V_OUT:
Turn-off time
IN to 10% V_OUT:
R_L = 12 Ω, T_j =-40...+150°C
Slew rate on
10 to 30% V_OUT, R_L = 12 Ω, T_j =-40...+150°C
Slew rate off
70 to 40% V_OUT, R_L = 12 Ω, T_j =-40...+150°C
I_L(ISO)
I_L(GNDhigh)
t_on
t_off
dV /dt_on
-dV/dt_off
-- 190 220 mΩ
390 440
1.6 1.8
--
--
-- A
1 mA
12
-- 125 µs
5
-- 85
--
--
3 V/µs
--
--
6 V/µs
Operating Parameters
Operating voltage ⁶⁾
T_j =-40...+150°C: V_bb(on)
4.7
-- 42 V
Undervoltage shutdown
T_j =25°C: V_bb(under)
2.9
-- 4.5 V
T_j =-40...+150°C:
2.7
-- 4.7
Undervoltage restart
T_j =-40...+150°C: V_{bb(u rst)}
--
-- 4.9 V
Undervoltage restart of charge pump
see diagram page 12
V_bb(ucp)
-- 5.6 6.0 V
Undervoltage hysteresis
∆V_bb(under) = V_{bb(u rst)} - V_bb(under)
∆V_bb(under)
-- 0.1
-- V
Overvoltage shutdown
T_j =-40...+150°C: V_bb(over)
42
-- 52 V
Overvoltage restart
T_j =-40...+150°C: V_{bb(o rst)}
40
--
-- V
Overvoltage hysteresis
Overvoltage protection⁷⁾
I_bb=4 mA
T_j =-40...+150°C: ∆V_bb(over)
T_j =-40...+150°C: V_bb(AZ)
-- 0.1
65 70
-- V
-- V
Standby current (pin 3)
V_IN=0
T_j=-40...+25°C: I_bb(off)
T_j= 150°C:
-- 10 15 µA
-- 18 25
Leakage output current (included in I_bb(off))
VIN=0
I_L(off)
--
-- 20 µA
Operating current (Pin 1)⁸⁾, V_IN=5 V,
Tj ^{=-40...+150°C}
I_GND
--
1 2.1 mA
6) _{At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V}
7) _{Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7.}
Semiconductor Group
3