BTS409L1 Datasheet, PDF (3/12 Pages) Siemens Semiconductor Group – Smart Highside Power Switch (Overload protection Current limitation Short circuit protection Thermal shutdown)

Electrical Characteristics
Parameter and Conditions
at Tj = 25 °C, V_bb = 12 V unless otherwise specified
BTS409L1
Symbol
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I_L = 1.8 A
T_j=25 °C: ^RON
T_j=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
V_ON = 0.5 V, T_C = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=30 V, V_IN= 0, see diagram
page 7
Turn-on time
IN to 90% V_OUT:
Turn-off time
IN to 10% V_OUT:
R_L = 12 Ω, T_j =-40...+150°C
Slew rate on
10 to 30% V_OUT, R_L = 12 Ω, T_j =-40...+150°C
Slew rate off
70 to 40% V_OUT, R_L = 12 Ω, T_j =-40...+150°C
I_L(ISO)
I_L(GNDhigh)
t_on
t_off
dV /dt_on
-dV/dt_off
-- 160 200 mΩ
320 400
1.8 2.3
-- A
--
-- 10 mA
80 200 400 µs
80 200 400
0.1
--
1 V/µs
0.1
--
1 V/µs
Operating Parameters
Operating voltage⁶⁾
T_j =-40...+150°C: V_bb(on)
5.0
-- 34 V
Undervoltage shutdown
T_j =-40...+150°C: V_bb(under)
3.5
-- 5.0 V
Undervoltage restart
T_j =-40...+25°C: V_{bb(u rst)}
T_j =+150°C:
--
-- 5.0 V
7.0
Undervoltage restart of charge pump
V_bb(ucp)
see diagram page 11
T_j =-40...+150°C:
-- 5.6 7.0 V
Undervoltage hysteresis
∆V_bb(under) = V_{bb(u rst)} - V_bb(under)
∆V_bb(under)
-- 0.2
-- V
Overvoltage shutdown
T_j =-40...+150°C: V_bb(over)
34
-- 43 V
Overvoltage restart
T_j =-40...+150°C: V_{bb(o rst)}
33
--
-- V
Overvoltage hysteresis
Overvoltage protection⁷⁾
T_j =-40...+150°C: ∆V_bb(over)
T_j =-40...+150°C: V_bb(AZ)
-- 0.5
42 47
-- V
-- V
I_bb=40 mA
Standby current (pin 3)
V_IN=0
T_j=-40...+25°C: I_bb(off)
T_j= 150°C:
-- 10 23 µA
-- 12 28
Leakage output current (included in I_bb(off))
I_L(off)
--
-- 12 µA
VIN=0
6) _{At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V}
7) _{See also VON(CL) in table of protection functions and circuit diagram page 7.}
Semiconductor Group
3