BSP89 Datasheet, PDF (3/9 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor

BSP 89
Electrical Characteristics, at T_j = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Dynamic Characteristics
Transconductance
V_DS≥ 2 _* I_{D *} R_DS(on)max, I_D = 0.36 A
Input capacitance
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Output capacitance
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Reverse transfer capacitance
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Turn-on delay time
V_DD = 30 V, V_GS = 10 V, I_D = 0.28 A
R_GS = 50 Ω
Rise time
V_DD = 30 V, V_GS = 10 V, I_D = 0.28 A
R_GS = 50 Ω
Turn-off delay time
V_DD = 30 V, V_GS = 10 V, I_D = 0.28 A
R_GS = 50 Ω
Fall time
V_DD = 30 V, V_GS = 10 V, I_D = 0.28 A
R_GS = 50 Ω
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
0.14
-
-
-
-
-
-
-
0.36 -
80
110
15
25
8
12
5
8
10
15
30
40
20
27
Unit
S
pF
ns
Semiconductor Group
3
Sep-12-1996