BSP316 Datasheet, PDF (3/9 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

BSP 316
Electrical Characteristics, at T_j = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Dynamic Characteristics
Transconductance
V_DS≥ 2 _* I_{D *} R_DS(on)max, I_D = -0.65 A
Input capacitance
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Output capacitance
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Reverse transfer capacitance
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
Turn-on delay time
V_DD = -30 V, V_GS = -10 V, I_D = -0.29 A
R_GS = 50 Ω
Rise time
V_DD = -30 V, V_GS = -10 V, I_D = -0.29 A
R_GS = 50 Ω
Turn-off delay time
V_DD = -30 V, V_GS = -10 V, I_D = -0.29 A
R_GS = 50 Ω
Fall time
V_DD = -30 V, V_GS = -10 V, I_D = -0.29 A
R_GS = 50 Ω
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
0.25
-
-
-
-
-
-
-
0.45 -
280
370
75
110
25
40
8
12
30
45
80
110
95
130
Unit
S
pF
ns
Semiconductor Group
3
Sep-12-1996