BSM100GAL120DN2 Datasheet, PDF (3/5 Pages) Siemens Semiconductor Group – IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)

BSM 100 GAL 120 DN2
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at T_j = 125 °C
Turn-on delay time
t_d(on)
V_CC = 600 V, V_GE = 15 V, I_C = 100 A
R_Gon = 6.8 Ω
-
130
Rise time
t_r
V_CC = 600 V, V_GE = 15 V, I_C = 100 A
R_Gon = 6.8 Ω
-
80
Turn-off delay time
t_d(off)
V_CC = 600 V, V_GE = -15 V, I_C = 100 A
R_Goff = 6.8 Ω
-
400
Fall time
t_f
V_CC = 600 V, V_GE = -15 V, I_C = 100 A
R_Goff = 6.8 Ω
-
70
ns
260
160
600
100
Free-Wheel Diode
Diode forward voltage
V_F
I_F = 100 A, V_GE = 0 V, T_j = 25 °C
-
I_F = 100 A, V_GE = 0 V, T_j = 125 °C
-
Reverse recovery time
t_rr
I_F = 100 A, V_R = -600 V, V_GE = 0 V
di_F/dt = -1000 A/µs, T_j = 125 °C
-
Reverse recovery charge
Q_rr
I_F = 100 A, V_R = -600 V, V_GE = 0 V
di_F/dt = -1000 A/µs
T_j = 25 °C
-
T_j = 125 °C
-
V
2.3
2.8
1.8
-
µs
0.3
-
µC
4
-
14
-
Semiconductor Group
3
Mar-29-1996