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| BPY11P Datasheet, PDF (3/4 Pages) Siemens Semiconductor Group – Silizium-Fotoelement Silicon Photovoltaic Cell | |||
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BPY 11 P
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)
Characteristics (TA = 25 °C, standard light A, T = 2856 K)
Bezeichnung
Description
Anstiegs und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL= 1 kâ¦; VR = 1 V; λ = 850 nm; Ip = 50 µA
Temperaturkoeffizient von VO
Temperature coefficient of VO
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
Kapazität, VR = 1 V, f = 1 MHz, E = 0
Capacitance
Symbol
Symbol
tr, tf
TCV
TCI
C0
Fotoempfindlichkeitsgruppen
Spectral sensitivity groups
Typ
Type
BPY 11 P IV
BPY 11 P V
ISC (Ev = 1000 Ix)
47 ... 63 µA
⥠56 µA
Wert
Value
3
â 2.6
0.12
0.8
Einheit
Unit
µs
mV/K
%/K
nF
Semiconductor Group
185
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