BFQ19S Datasheet, PDF (3/4 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and)

BFQ 19S
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
AC Characteristics
Transition frequency
I_C = 70 mA, V_CE = 8 V, f = 500 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 10 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure
I_C = 20 mA, V_CE = 8 V, Z_S = Z_Sopt
f = 900 MHz
f = 1.8 GHz
Power gain ²⁾
I_C = 70 mA, V_CE = 8 V, Z_S = Z_Sopt
Z_L = Z_Lopt
f = 900 MHz
f = 1.8 GHz
Transducer gain
I_C = 30 mA, V_CE = 8 V, Z_S =Z_L= 50 Ω
f = 900 MHz
f = 1.8 GHz
Third order intercept point
I_C = 70 mA, V_CE = 8 V, f = 900 MHz
Z_S =Z_L= 50 Ω
f_T
4
C_cb
-
C_ce
-
C_eb
-
F
-
-
G_ma
-
-
|S_21e|²
-
-
IP₃
-
5.5
1
0.4
4.4
2.5
4
11.5
7
9.5
4
35
max.
-
1.5
-
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
dBm
Semiconductor Group
3
Dec-16-1996