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BCR512 Datasheet, PDF (3/4 Pages) Siemens Semiconductor Group – NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, drive circuit)
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BCR 512
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 3
-
hFE 10 2
10 1
10 0
Collector-Emitter Saturation Voltage
VCEsat = f(IC), hFE = 20
10 3
mA
IC
10 2
10 1
10 -1
10 -1
10 0
10 1
10 2 mA
IC
Input on Voltage Vi(on) = f(IC)
VCE = 0.3V (common emitter configuration)
10 0
0.0
0.2
0.4
0.6
V
1.0
VCEsat
Input off voltage Vi(off) = f(IC)
VCE = 5V (common emitter configuration)
10 3
mA
IC 10 2
10 1
mA
IC
10 0
10 1
10 -1
10 0
10 -1
10 -1
10 0
Semiconductor Group
10 1
V
Vi(on)
3
10 -2
0.0
0.5
1.0
V
2.0
Vi(off)
Nov-27-1996
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