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BCR116W Datasheet, PDF (3/4 Pages) Siemens Semiconductor Group – NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
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BCR 116W
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 3
-
hFE
10 2
10 1
Collector-Emitter Saturation Voltage
VCEsat = f(IC), hFE = 20
10 2
IC mA
10 1
10 0
10 -1
10 0
10 1
mA
IC
Input on Voltage Vi(on) = f(IC)
VCE = 0.3V (common emitter configuration)
10 0
0.0
0.2
0.4
0.6
V
1.0
VCEsat
Input off voltage Vi(off) = f(IC)
VCE = 5V (common emitter configuration)
10 2
mA
IC
10 1
10 1
mA
IC 10 0
10 -1
10 0
10 -2
10 -1
10 -1
10 0
Semiconductor Group
10 1
V
Vi(on)
3
10 -3
0.0
0.2
0.4
0.6
V
1.0
Vi(off)
Nov-26-1996
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