BCP51-BCP53 Datasheet, PDF (3/5 Pages) Siemens Semiconductor Group – PNP Silicon AF Transistors (For AF driver and output stages High collector current)

BCP 51
... BCP 53
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V
IC = 10 mA, IB = 0
BCP 51
45
–
–
BCP 52
60
–
–
BCP 53
80
–
–
Collector-base breakdown voltage
V(BR)CB0
IC = 100 µA, IB = 0
BCP 51
45
–
–
BCP 52
60
–
–
BCP 53
100 –
–
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EB0 5
–
–
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
ICB0
–
–
100 nA
–
–
20
µA
Emitter-base cutoff current
VEB = 5 V, IC = 0
IEB0
–
–
10
µA
DC current gain¹⁾
hFE
IC = 5 mA, VCE = 2 V
IC = 150 mA, VCE = 2 V
BCP 51/BCP 52/BCP 53
BCP 51/BCP 52/BCP 53-10
BCP 51/BCP 52/BCP 53-16
IC = 500 mA, VCE = 2 V
–
25
–
–
40
–
250
63
100 160
100 160 250
25
–
–
Collector-emitter saturation voltage¹⁾
IC = 500 mA, IB = 50 mA
VCEsat
–
–
0.5 V
Base-emitter voltage¹⁾
IC = 500 mA, VCE = 2 V
VBE
–
–
1
AC characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
fT
–
125 –
MHz
1) _{Pulse test conditions: t ≤ 300 µs, D = 2 %.}
Semiconductor Group
3