BC856W-BC860W Datasheet, PDF (3/8 Pages) Siemens Semiconductor Group – PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

BC 856W ... BC 860W
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V
IC = 10 mA
BC 856W
65
–
–
BC 857W, BC 860W
45
–
–
BC 858W, BC 859W
30
–
–
Collector-base breakdown voltage
V(BR)CB0
IC = 10 µA
BC 856W
80
–
–
BC 857W, BC 860W
50
–
–
BC 858W, BC 859W
30
–
–
Collector-emitter breakdown voltage
V(BR)CES
IC = 10 µA, VBE = 0
BC 856W
80
–
–
BC 857W, BC 860W
50
–
–
BC 858W, BC 859W
30
–
–
Emitter-base breakdown voltage
IE = 1 µA
V(BR)EB0 5
–
–
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
ICB0
–
–
15 nA
–
–
5
µA
DC current gain
IC = 10 µA, VCE = 5 V
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
IC = 2 mA, VCE = 5 V
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
hFE
–
–
140 –
–
250 –
–
480 –
125 180 250
220 290 475
420 520 800
Collector-emitter saturation voltage¹⁾
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
–
–
mV
75 300
250 650
Base-emitter saturation voltage¹⁾
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
–
–
700 –
850 –
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(on)
600 650 750
–
–
820
1)_{Pulse test: t ≤ 300 µs, D = 2 %.}
Semiconductor Group
3