BC337 Datasheet, PDF (3/6 Pages) Motorola, Inc – Amplifier Transistor

BC 337
BC 338
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V
IC = 10 mA
BC 337
45
–
–
BC 338
25
–
–
Collector-base breakdown voltage
V(BR)CB0
IC = 100 µA
BC 337
50
–
–
BC 338
30
–
–
Emitter-base breakdown voltage
IE = 10 µA
V(BR)EB0 5
–
–
Collector cutoff current
VCB = 25 V
VCB = 45 V
VCB = 25 V, TA = 150 ˚C
VCB = 45 V, TA = 150 ˚C
ICB0
BC 338
–
–
100 nA
BC 337
–
–
100 nA
BC 338
–
–
10
µA
BC 337
–
–
10
µA
Emitter cutoff current
VEB = 4 V
IEB0
–
–
100 nA
DC current gain¹⁾
hFE
IC = 100 mA; VCE = 1 V
BC 337/16; BC 338/16
BC 337/25; BC 338/25
BC 337/40; BC 338/40
IC = 300 mA; VCE = 1 V
BC 337/16; BC 338/16
BC 337/25; BC 338/25
BC 337/40; BC 338/40
–
100 160 250
160 250 400
250 350 630
60
–
–
100 –
–
170 –
–
Collector-emitter saturation voltage¹⁾
IC = 500 mA; IB = 50 mA
VCEsat
–
–
0.7 V
Base-emitter saturation voltage
IC = 500 mA; IB = 50 mA
VBEsat
–
–
2
1) _{Pulse test: t ≤ 300 µs, D ≤ 2 %.}
Semiconductor Group
3