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BB659C Datasheet, PDF (3/3 Pages) Siemens Semiconductor Group – Silicon Variable Capacitance Diode (For VHF-TV-tuners High capacitance ratio Low series inductance Low series resistance)
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BB 659C
Diode capacitance CT = f (VR)
f = 1MHz
40
pF
CT 30
25
20
15
10
5
0
0
5
10
15
20
V
30
VR
Reverse current IR = f (VR)
TA = Parameter
10 3
85°C
pA
IR 10 2
25°C
Temperature coefficient of the diode
capacitance TCc = f (VR)
10 -3
1/°C
T Cc
10 -4
10
-5
10
0
10 1
Reverse current IR = f (TA)
VR = 28V
10 3
pA
IR
10 2
V
10 2
VR
10 1
10 1
10 0
10
-1
10
0
10 1
SSeemmicioconndduuctcotor rGGrorouupp
V
10 2
VR
33
10 0
-30 -10 10 30 50 70 °C 100
TA
Jul1-92948--11919-081