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BAT17W Datasheet, PDF (3/3 Pages) Siemens Semiconductor Group – Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications)
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BAT 17W
Forward current IF = f (VF)
TA = parameter
10 2
mA
10 1
TA = 25°C
TA = 85°C
TA = 125°C
10 0
Diode capacitance CT = f (VR)
f = 1MHz
0.7
pF
0.5
0.4
10 -1
10 -2
0.0
0.2
0.4
0.6
Leakage current IR = f (VR)
TA = Parameter
10 2
uA
10 1
V
1.0
VF
125°C
10 0
85°C
0.3
0.2
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
VR
10 -1
10 -2
25°C
10 -3
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
VR
SSeemmicioconndduuctcotor rGGrorouupp
33
Sep-109498-1-1919-081