BAS70- Datasheet, PDF (3/5 Pages) Siemens Semiconductor Group – Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)

BAS 70 …
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Breakdown voltage
IR = 10 µA
Reverse current
VR = 50 V
VR = 70 V
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 15 mA
Diode capacitance
VR = 0, f = 1 MHz
Charge carrier life time
IF = 25 mA
Differential forward resistance
IF = 10 mA, f = 10 kHz
Symbol
Values
Unit
min. typ. max.
V(BR)
70
–
–
V
IR
µA
–
–
0.1
–
–
10
VF
mV
–
375 410
–
705 750
–
880 1000
CT
–
1.6 2
pF
τ
–
–
100 ps
rf
–
30 –
Ω
Semiconductor Group
3