BAS125 Datasheet, PDF (3/5 Pages) Siemens Semiconductor Group – Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications)

BAS 125 …
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
Reverse current
VR = 20 V
VR = 25 V
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 35 mA
Diode capacitance
VR = 0, f = 1 MHz
Differential forward resistance
IF = 5 mA, f = 10 kHz
Symbol
min.
IR
–
–
VF
–
–
–
CT
–
Values
typ. max.
–
1
–
10
385 410
530 –
800 900
–
1.1
Unit
µA
mV
pF
RF
–
15 –
Ω
Semiconductor Group
3