SMBTA70 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – PNP Silicon Transistor

SMBTA 70
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
Emitter-base breakdown voltage
IE = 100 µA
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
Emitter-base cutoff current
VEB = 4 V, IC = 0
DC current gain
IC = 5 mA, VCE = 10 V
Collector-emitter saturation voltage¹⁾
IC = 10 mA, IB = 1 mA
AC characteristics
Transition frequency
IC = 5 mA, VCE = 10 V, f = 100 MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 40
–
V(BR)EB0 4
–
ICB0
–
–
–
–
IEB0
–
–
hFE
40
–
VCEsat
–
–
–
V
–
100 nA
20
µA
20 nA
400 –
0.25 V
fT
125 –
–
MHz
Cobo
–
–
4
pF
1) _{Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.}
Semiconductor Group
2