SMBTA56M Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – PNP Silicon AF Transistor

SMBTA 56M
Electrical Characteristics at T_A=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 1 mA, I_B = 0
V_(BR)CEO ⁸⁰
-
-V
Collector-base breakdown voltage
I_C = 100 µA, I_B = 0
Emitter-base breakdown voltage
I_E = 10 µA, I_C = 0
V_(BR)CBO 80
-
V_(BR)EBO 4
-
-
-V
Collector cutoff current
V_CB = 80 V, I_E = 0
I_CBO
-
- 100 nA
Collector cutoff current
V_CB = 80 V, I_E = 0 , T_A = 150 °C
Collector cutoff current
V_CE = 60 V, I_B = 0
I_CBO
I_CEO
-
-
20 µA
-
- 100 nA
DC current gain 1)
I_C = 10 mA, V_CE = 1 V
I_C = 100 mA, V_CE = 1 V
h_FE
-
100 -
-
100
-
-
Collector-emitter saturation voltage1)
I_C = 100 mA, I_B = 10 mA
Base-emitter voltage 1)
I_C = 100 mA, V_CE = 1 V
V_CEsat
-
V_BE(ON)
-
- 0.25 V
-
1.2 V
AC Characteristics
Transition frequency
I_C = 20 mA, V_CE = 5 V, f = 100 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
f_T
-
150
- MHz
C_cb
-
5
- pF
1) Pulse test: t < 300µs; D < 2%
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