|
SMBTA55 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – PNP Silicon AF Transistors | |||
|
◁ |
SMBTA 55
SMBTA 56
Electrical Characteristics
at TA = 25 ËC, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
SMBTA 55
SMBTA 56
Collector-base breakdown voltage
IC = 100 µA
SMBTA 55
SMBTA 56
Emitter-base breakdown voltage
IE = 10 µA
Collector-base cutoff current
VCB = 60 V
VCB = 80 V
VCB = 60 V, TA = 150 ËC
VCB = 80 V, TA = 150 ËC
SMBTA 55
SMBTA 56
SMBTA 55
SMBTA 56
Collector cutoff current
VCE = 60 V
DC current gain1)
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 10 mA
Base-emitter saturation voltage1)
IC = 100 mA, VCE = 1 V
AC characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
V
60
â
â
80
â
â
V(BR)CB0
60
â
â
80
â
â
V(BR)EB0 4
â
â
ICB0
â
â
100 nA
â
â
100 nA
â
â
20
µA
â
â
20
µA
ICE0
â
â
100 nA
hFE
VCEsat
â
100 â
â
100 130 170
â
â
0.25 V
VBE
â
â
1.2
fT
â
Cobo
â
100 â
12 â
MHz
pF
1) Pulse test conditions: t ⤠300 µs, D = 2 %.
Semiconductor Group
2
|
▷ |