SMBTA05 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – NPN Silicon AF Transistors

SMBTA 05
SMBTA 06
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
SMBTA 05
SMBTA 06
Collector-base breakdown voltage
IC = 100 µA
SMBTA 05
SMBTA 06
Emitter-base breakdown voltage
IE = 10 µA
Collector-base cutoff current
VCB = 60 V
VCB = 80 V
VCB = 60 V, TA = 150 ˚C
VCB = 80 V, TA = 150 ˚C
SMBTA 05
SMBTA 06
SMBTA 05
SMBTA 06
Collector cutoff current
VCE = 60 V
DC current gain¹⁾
IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
Collector-emitter saturation voltage¹⁾
IC = 100 mA, IB = 10 mA
Base-emitter saturation voltage¹⁾
IC = 100 mA, VCE = 1 V
AC characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 20 MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
V
60
–
–
80
–
–
V(BR)CB0
60
–
–
80
–
–
V(BR)EB0 4
–
–
ICB0
–
–
100 nA
–
–
100 nA
–
–
20
µA
–
–
20
µA
ICE0
–
–
100 nA
hFE
VCEsat
–
100 –
–
100 130 170
–
–
0.25 V
VBE
–
–
1.2
fT
–
Cobo
–
100 –
12 –
MHz
pF
1) _{Pulse test conditions: t ≤ 300 µs, D = 2 %.}
Semiconductor Group
2