SMBT4126 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – PNP Silicon Switching Transistor

SMBT 4126
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
Collector-base breakdown voltage
IC = 10 µA
Emitter-base breakdown voltage
IE = 10 µA
Collector-base cutoff current
VCB = 20 V, IE = 0
Emitter-base cutoff current
VEB = 3 V, IC = 0
DC current gain
IC = 2 mA, VCE = 1 V
IC = 50 mA, VCE = 1 V
Collector-emitter saturation voltage¹⁾
IC = 50 mA, IB = 5 mA
Base-emitter saturation voltage¹⁾
IC = 50 mA, IB = 5 mA
AC characteristics
Transition frequency
IC = 10 mA, VCE = 20 V, f = 100 MHz
Output capacitance
VCB = 5 V, f = 1 MHz
Input capacitance
VEB = 0.5 V, f = 1 MHz
Small-signal current gain
IC = 1 mA, VCE = 5 V, f = 1 kHz
Noise figure
IC = 0.1 mA, VCE = 5 V, f = 10 Hz to 15 kHz
RS = 1 kΩ
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 25
–
V(BR)CB0 25
–
V(BR)EB0 4
–
ICB0
–
–
IEB0
–
–
hFE
VCEsat
120 –
60
–
–
–
VBEsat
–
–
–
V
–
–
50 nA
50
–
360
–
0.4 V
0.95
fT
250 –
Cobo
–
–
Cibo
–
–
hfe
120 –
NF
–
–
–
MHz
4.5 pF
10
480 –
4
dB
1) _{Pulse test conditions: t ≤ 300 µs, D ≤ 2 %.}
Semiconductor Group
2