SMBT3904 Datasheet, PDF (2/7 Pages) Siemens Semiconductor Group – NPN Silicon Switching Transistor

SMBT 3904
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
Collector-base breakdown voltage
IC = 10 µA
Emitter-base breakdown voltage
IE = 10 µA
Collector-base cutoff current
VCB = 30 V
DC current gain
IC = 100 µA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V¹⁾
IC = 50 mA, VCE = 1 V¹⁾
IC = 100 mA, VCE = 1 V¹⁾
Collector-emitter saturation voltage¹⁾
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
Base-emitter saturation voltage¹⁾
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 40
–
V(BR)CB0 60
–
V(BR)EB0 6
–
ICB0
–
–
hFE
VCEsat
VBEsat
40
–
70
–
100 –
60
–
30
–
–
–
–
–
0.65 –
–
–
–
V
–
–
50 nA
–
–
–
300
–
–
V
0.2
0.3
0.85
0.95
1) _{Pulse test conditions: t ≤ 300 µs, D = 2 %.}
Semiconductor Group
2