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SMBT2907A Datasheet, PDF (2/7 Pages) Infineon Technologies AG – PNP Silicon Switching Transistor
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SMBT 2907A
Electrical Characteristicsn at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 50 V, IE = 0
Collector cutoff current
VCB = 50 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 3 V, IC = 0
DC current gain 1)
IC = 100 µA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
V(BR)CEO 60
-
-V
V(BR)CBO 60
-
-
V(BR)EBO 5
-
-
ICBO
-
-
10 nA
ICBO
-
-
10 µA
IEBO
-
-
10 nA
hFE
-
75
-
-
100 -
-
100 -
-
100 - 300
50
-
-
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage 1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VCEsat
-
V
-
0.4
-
-
1.6
VBEsat
-
-
1.3
-
-
2.6
1) Pulse test: t ≤ 300µs, D = 2%
Semiconductor Group
2
Jan-22-1999
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