PZTA92 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP high-voltage transistor

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
PZTA 92
PZTA 93
Collector-base breakdown voltage
IC = 100 µA, IB = 0
PZTA 92
PZTA 93
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
Collector-base cutoff current
VCB = 200 V
VCB = 160 V
VCB = 200 V, TA = 150 ˚C
VCB = 160 V, TA = 150 ˚C
PZTA 92
PZTA 93
PZTA 92
PZTA 93
Emitter-base cutoff current
VEB = 3 V, IC = 0
DC current gain¹⁾
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
Collector-emitter saturation voltage¹⁾
IC = 20 mA, IB = 2 mA
PZTA 92
PZTA 93
Base-emitter saturation voltage¹⁾
IC = 20 mA, IB = 2 mA
AC characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 20 V, f = 1 MHz
PZTA 92
PZTA 93
PZTA 92
PZTA 93
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
300 –
200 –
V(BR)CB0
300 –
200 –
V(BR)EB0 5
–
ICB0
–
–
–
–
–
–
–
–
IEB0
–
–
hFE
25
–
40
–
25
–
VCEsat
–
–
–
–
VBEsat
–
–
V
–
–
–
–
–
250 nA
250 nA
20
µA
20
µA
100 nA
–
–
–
–
V
0.5
0.4
0.9
fT
–
Cobo
–
–
100 –
–
6
–
8
MHz
pF
1) _{Pulse test conditions: t ≤ 300 µs, D = 2 %.}
Semiconductor Group
2