PZTA63 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – PNP Silicon Darlington Transistors

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 100 µA
Collector-base breakdown voltage
IC = 100 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCE = 30 V, IE = 0
VCE = 30 V, IE = 0, TA = 150 ˚C
Emitter-base cutoff current
VEB = 10 V, IC = 0
DC current gain
IC = 10 mA, VCE = 5 V
IC = 100 mA, VCE = 5 V
PZTA 63
PZTA 64
PZTA 63
PZTA 64
Collector-emitter saturation voltage¹⁾
IC = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage¹⁾
IC = 100 mA, IB = 0.1 mA
AC characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
PZTA 63
PZTA 64
Symbol
Values
Unit
min. typ. max.
V(BR)CES 30
–
V(BR)CB0 30
–
V(BR)EB0 10
–
ICB0
–
–
–
–
IEB0
–
–
hFE
VCEsat
5000 –
10000 –
10000 –
20000 –
–
–
VBEsat
–
–
–
V
–
–
100 nA
10
µA
100 nA
–
–
–
–
–
1.5 V
2.0
fT
125 –
–
MHz
1) _{Pulse test conditions: t ≤ 300 µs, D = 2 %.}
Semiconductor Group
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