PZT2907 Datasheet, PDF (2/6 Pages) Siemens Semiconductor Group – PNP Silicon Switching Transistors

PZT 2907
PZT 2907 A
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
IC = 10 mA, IB = 0
PZT 2907
40
–
PZT 2907 A
60
–
Collector-base breakdown voltage
V(BR)CB0
IC = 10 µA, IB = 0
PZT 2907
60
–
PZT 2907 A
60
–
Emitter-base breakdown voltage
IE = 10 µA, IE = 0
V(BR)EB0 5
–
Collector-base cutoff current
ICB0
VCB = 50 V, IE = 0
PZT 2907
–
–
PZT 2907 A
–
–
VCB = 50 V, IE = 0, TA = 150 ˚C
PZT 2907
–
–
PZT 2907 A
–
–
Emitter-base cutoff current
VEB = 3 V, IC = 0
IEB0
–
–
Collector-emitter cutoff current
VCE = 30 V, + VBE = 0.5 V
ICEV
–
–
Collector-base cutoff current
VCE = 30 V, + VBE = 0.5 V
IEBV
–
–
DC current gain¹⁾
IC = 0.1 mA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
hFE
PZT 2907
PZT 2907 A
PZT 2907
PZT 2907 A
PZT 2907
PZT 2907 A
PZT 2907
PZT 2907 A
PZT 2907
PZT 2907 A
35
–
75
–
50
–
100 –
75
–
100 –
100 –
100 –
30
–
50
–
V
–
–
–
–
–
20 nA
10 nA
20
µA
10
µA
10 nA
50
50
–
–
–
–
–
–
–
300
300
–
–
1) _{Pulse test conditions: t ≤ 300 µs, D = 2 %.}
Semiconductor Group
2