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IL4108 Datasheet, PDF (2/2 Pages) Siemens Semiconductor Group – ZERO VOLTAGE CROSSING 800 V TRIAC DRIVER OPTOCOUPLER
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Electrical Characteristics
Parameter
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance, Junction to Lead
Output Detector
Repetitive Peak Off-state Voltage
Off-state Voltage
Off-state Current
Symbol Min. Typ. Max. Unit
VF
VBR
6
IR
C0
RTHJL
1.16 1.35 V
30
V
0.1 10
µA
25
pF
750
°C/W
VDRM
800
V
VD(RMS)
565
V
ID(RMS)1
10
100 µA
Off-state Current
On-state Voltage
On-state Current
Surge (Non-repetitive On-state Current)
Trigger Current 1
Trigger Current 2
ID(RMS)2
VTM
ITM
ITSM
IFT1
IFT2
200 µA
1.7 3
V
300 mA
3
A
2.0 mA
6.0 mA
Trigger Current Termperature Gradient
Inhibit Voltage Temperature Gradient
Off-state Current in Inhibit State
Capacitance between Input and Output Circuit
Holding Current
Latching Current
Zero Cross Inhibit Voltage
Turn-on Time
Turn-off Time
Critical Rate of Rise of Off-State Voltage
Critical Rate of Rise of Voltage at
Current Commutation
Critical Rate of Rise of On-state Current
Thermal Resistance, Junction to Lead
Package
Critical Rate of Rise of Coupled Input/Output
Voltage
Common Mode Coupling Capacitor
Package Capacitance
∆IFT1/∆Tj
∆IFT2/∆Tj
7
14
7
14
∆VDINH/
–20
∆Tj
IDINH
50
200
CIO
2.0
IH
65
500
IL
5
VIH
15
25
tON
35
tOFF
50
dv/dtcr
dv/dtcr
10000
5000
dv/dtcrq
dv/dtcrq
di/dt/cr
RTHJL
10000
5000
8
150
dv(IO)/dt
CCM
CIO
1000
0
0.01
0.8
µA/K
µA/K
mV/K
µA
pF
µA
mA
V
µs
µs
V/µs
V/µs
V/µs
V/µs
A/µs
°C/W
V/µs
pF
pF
Condition
IF=10 mA
IR=10 µA
VR=6 V
VF=0 V, f=1 MHz
IDRM=100 µA
ID(RMS)=70 µA
VD=800 V, TA100°C, IF=0
mA
VD=800 V, IF=Rated IFT
IT=300 mA
PF=1.0, VT(RMS)=1.7 V
f=50 Hz
VD=5 V
Vop=220 V, f=50 Hz,
Tj=100°C, tpF>10 ms
IF=IFT1, VDRM
VD=0, f=1 kHz
VT=2.2 V
IF=Rated IFT
VRM=VDM=565 VAC
PF=1.0, IT=300 mA
VD=0.67 VDRM, Tj=25°C
Tj=80°C
VD=0.67 VDRM,
di/dtcrq<15 A/ms
Tj=25°C
Tj=80°C
IT=0 A,
VRM=VDM=565 VAC
f=1 MHz, VIO=0 V
5–142
IL4108