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| IL1 Datasheet, PDF (2/5 Pages) Siemens Semiconductor Group – PHOTOTRANSISTOR OPTOCOUPLER | |||
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Characteristics
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance Junction to Lead
Detector
Capacitance
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
DC Forward Current Gain
Saturated DC Forward Current Gain
Thermal Resistance Junction to Lead
Package Transfer Characteristics
IL1
Saturated Current Transfer Ratio
(Collector-Emitter)
Current Transfer Ratio
(Collector-Emitter)
Current Transfer Ratio
(Collector-Base)
IL2
Saturated Current Transfer Ratio
(Collector-Emitter)
Current Transfer Ratio
(Collector-Emitter)
Current Transfer Ratio
IL5
Saturated Current Transfer Ratio
(Collector-Emitter)
Current Transfer Ratio
(Collector-Emitter)
Current Transfer Ratio
Isolation and Insulation
Common Mode Rejection Output High
Common Mode Rejection Output Low
Common Mode Coupling Capacitance
Package Capacitance
Insulation Resistance
Symbol
Min
Typ
Max
Unit
Condition
VF
VBR
IR
CO
RTHJL
CCE
CCB
CEB
ICEO
VCESAT
VBE
HFE
HFESAT
RTHJL
1.25
1.65
V
IF=60 mA
6
30
V
IR=10 µA
0.01
10
µA
VR=6 V
40
pF
VR=0 V, f=1 MHz
750
°C/W
6.8
pF
VCE=5 V, f=1 MHz
8.5
pF
VCB=5 V, f=1 MHz
11
pF
VEB=5 V, f=1 MHz
5
50
nA
VCE=10 V
0.25
ICE=1 mA, IB=20 µA
0.65
V
VCE=10 V, IB=20 µA
200
650
1800
VCE=10 V, IB=20 µA
120
400
600
VCE=0.4 V, IB=20 µA
500
°C/W
CTRCESAT
CTRCE
20
CTRCB
75
%
80
300
%
0.25
%
IF=10 mA, VCE=0.4 V
IF=10 mA, VCE=10 V
IF=10 mA, VCB=9.3 V
CTRCESAT
170
%
CTRCE
CTRCB
100
200
500
%
0.25
%
IF=10 mA, VCE=0.4 V
IF=10 mA, VCE=10 V
IF=10 mA, VCB=9.3 V
CTRCESAT
CTRCE
50
CTRCB
100
%
130
400
%
0.25
%
IF=10 mA, VCE=0.4 V
IF=10 mA, VCE=10 V
IF=10 mA, VCB=9.3 V
CMH
CML
CCM
CI-O
RS
5000
5000
0.01
0.6
10+14
V/µs
V/µs
pF
pF
â¦
VCM=50 VP-P, RL=1 kâ¦, IF=0 mA
VCM=50 VP-P, RL=1 kâ¦, IF=10
mA
VI-O=0 V, f=1 MHz
VI-O=500 V
IL1/2/5
5â2
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